Photovoltaic Module Solution

  • 650V / 1000V / 1200V IGBTs optimized for PV applications, featuring ultra-low static and dynamic losses for higher system efficiency.

  • 2000V SiC BOOST devices that simplify MPPT design and improve overall efficiency.

  • Enhanced Easy3B and Easy2B packages with customized pin layouts, supporting diverse PV string configurations and high-temperature operation up to 175 °C.

  • High device consistency and excellent current sharing, enabling reliable parallel operation and easy system scaling.

  • Optimized solutions tailored to application and overload requirements, including package and chip configuration customization.

Introduction to the PV Module Series Solution

Adopting high-eficiency trench field stop IGBTs andplanar-gate SiC MOSFETs combined with high-reliabilityEasy2B /Easy 3B/62mm packages, the products can enhance theenergy conversion efficiency of photovoltaic power plants andimprove system reliability, covering the whole range of stringand centralised photovoltaic system.

IGBT Product List

DC/AC Grid Interconnection NPC1

Application Topology ANPC

DC/AC Grid Interconnection ANPC

Application Topology NPC2

DC/AC Grid Interconnection NPC2

Product model chip Types Ic(A)@25℃ Topology Rated(V) Packaging
HCG600FL120E3T1 Hybrid 600 3-level 1200 Econo Dual 3A
HCG600FL110E3T1 Hybrid 600 3-level 1100 Econo Dual 3A
HCS600FH120M2 SiC 600 Half Bridge 1200 Econo Dual 3A
HCS450FH120M2 SiC 450 Half Bridge 1200 Econo Dual 3A
HCS670FH120M2 SiC 670 Half Bridge 1200 Econo Dual 3A
HCS450FH220M SiC 450 Half Bridge 2200 Econo Dual 3A
HCS600FH220M SiC 600 Half Bridge 2200 Econo Dual 3A
HCS300FH120M SiC 300 Half Bridge 1200 Econo Dual 3A
HCS600FH120D5B3 SiC 600 Half Bridge 1200 Econo Dual3C
HCS05FH120E1R1 SiC 150 Half Bridge 1200 Easy 1B
HCS10FH120E1A2 SiC 100 Half Bridge 1200 Easy 1B
HCS30FF120E1A1 SiC 45 H-Bridge 1200 Easy 1B
HCS400FH120BG SiC 400 Half Bridge 1200 Easy 1B

SiC Product List

DC/AC Grid Interconnection NPC1

Application_Topology_Dual_Boost-1

DC/AC Grid Interconnection ANPC

Application_Topology_FC_Boost-1

DC/AC Grid Interconnection NPC2

Product model chip Types Ic(A)@25℃ Topology Rated(V) Packaging
HCS06FH120E2C1 SiC 200 Half Bridge 1200 Easy2B
HCS08FH120E2A2 SiC 160 Half Bridge 1200 Easy2B
HCH10FA120E2C1 Hybrid 100 ANPC 1200 Easy2B
HCS04FC120E2C2 SiC 200 Chopper 1200 Easy2B
HCS05FH230E2B2 SiC 240 Half Bridge 2300 Easy 2B
HCS240FH120E2DM SiC 240 Half Bridge 1200 Easy2B
HCS350FH200E3 SiC 350 Half Bridge 2000 Easy 3B
HCS600FL120E3T1 SiC 600 3-level 1200 Easy 3B
HCS320FH120A2M SiC 320 Half Bridge 1200 62mm
HCS350FH120A2M SiC 350 Half Bridge 1200 62mm
HCS360FH120A2C1 SiC 360 Half Bridge 1200 62mm
HCS400FH120A2BM SiC 400 Half Bridge 1200 62mm
HCS540FH120A2A1 SiC 540 Half Bridge 1200 62mm
HCS300FH170A2C1 SiC 300 Half Bridge 1700 62mm
HCS400FH170A2C1 SiC 400 Half Bridge 1700 62mm
HCS68FS120ST SiC 68 Single sw itch 1200 SOT-227
HCS120FS120ST SiC 120 Single sw itch 1200 SOT-227

PV-Oriented Device & Topology Optimization

From semiconductor structure to system topology, every detail is optimized for photovoltaic operating conditions.

PV-specific voltage platforms

Dedicated voltage classes of 650V / 1000V / 1200V / 1700V / 2200V align with mainstream and next-generation PV DC bus designs, including 1500V systems.

Ultra-low switching and conduction losses

Trench-field-stop IGBTs and planar-gate SiC MOSFETs significantly reduce both dynamic and static losses, improving inverter efficiency and lowering thermal stress.

Native support for PV topologies

Optimized for Boost, Dual Boost, FC Boost, NPC, ANPC, 3-Level, and Half-Bridge topologies commonly used in PV inverters and DC/DC stages.

Designed for harsh outdoor environments

High junction temperature capability (up to 175°C) ensures stable operation under high ambient temperatures and long service life.

Build Your Next PV System with HIITIO

Get expert support to select the right IGBT or SiC module for your PV application.

System-Oriented Power Semiconductor Expertise

Beyond individual devices, HIITIO delivers system-oriented power semiconductor solutions for real-world energy conversion applications.

Application-focused power semiconductor development

Focus on real-world application scenarios rather than isolated device performance, with long-term involvement in renewable energy, power electronics, and industrial power systems.

Comprehensive voltage and packaging portfolio

Full coverage from discrete devices to integrated power modules, supporting voltage classes from 650V to 2200V and multiple industry-standard packages for different power levels.

Topology- and application-based product selection

Support device and module selection based on system topology, DC bus voltage, current rating, switching frequency, and thermal requirements.

Designed for scalability and long-term reliability

Products and platforms are structured to support parallel operation, power scaling, and stable long-term operation in demanding environments.

Application Scenarios

Covering key energy conversion stages in photovoltaic and PV-plus-storage systems.

PV Inverters

DC/DC Boost Converters

Grid-Connected Converters

PV+Energy Storage Systems

PV Module Series Solution FAQs

Frequently Asked Questions on Photovoltaic Power Module Selection

IGBT is recommended for medium-to-low frequency, high-power systems; SiC is preferred for high-frequency, high-efficiency systems.

Yes, we provide SiC module solutions for 1700V and higher voltage levels.

Yes, multiple modules are suitable for parallel operation and power scaling.

Customization support at the device and packaging levels is available based on project requirements.

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