EN 
DE 
ZH 
ES 
3300V 1000A IGBT Module H1 Package with FWD
- Low Saturation Voltage: VCE(sat) = 2.45V-3.80V (typ) for maximum efficiency
- High Current Capability: 1000A DC collector current rating
- Superior Thermal Performance: Junction operating temperature up to 150°C
- Integrated Protection: Built-in freewheeling diode for enhanced reliability
- Standard H Package: Easy integration and mounting
Description
The HCG1000S330H1K1 is a premium-grade IGBT power module designed for demanding high-power applications. Featuring advanced planar gate technology and field-stop structure, this module delivers exceptional performance in a standard H1 package.
Maximum Rated Values
| Parameter | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE=0V,Tvj=25℃ | 3300 | V |
| DC Collector Current | lc | Tc=100℃,Tvj=150℃ | 1000 | A |
| Peak Collector Current | CM | tp=1ms | 2000 | A |
| Gate-Emitter Voltage | VGES | ±20 | V | |
| Total Power Dissipation | Ptot | Tc=25°℃,Tvj=150℃ | 10 | kW |
| DC Forward Current | IF | 1000 | A | |
| Peak Forward Current | IFRM | tp=1ms | 2000 | A |
| Surge Current | IFSM | VR=0V,Tvj=150℃,tp=10ms,half-sinewave | 9000 | A |
| IGBT Short Circuit SOA | tpsc | Vcc=2500V,VCEM CHIP≤3300V VGE≤15V,Tvj≤150℃ |
10 | μs |
| Maximum Junction Temperature | Tvj(max) | 150 | ℃ | |
| Junction Operating Temperature | Tv(op) | -40~150 | ℃ | |
| Case temperature | Tc | -40~150 | ℃ | |
| Storage Temperature | T stg | -40~125 | ℃ |
Additional information
| Module | IGBT |
|---|---|
| Package | H1 |
| Blocking Voltage (V) | 3300 |
| Module Current (A) | 1000 |
