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E0 1200V 150A SIC Power Module
The HCS09FC120E1Q1 is a half bridge SiC MOSFET Power Module. It integrates high
performance SiC MOSFET chips designed for applications such as Solar Inverter Systems, Fuel cell-DC/DC converters, Uninterruptible Power suppliers, and Energy Storage Systems.
Description
Features
- Blocking voltage:1200V
- 9.2mΩ Rds(on)@Tj =25°C
- 150A@Tf =75°C
- 175°C maximum junction temperature
- Low thermal resistance with Si3N4AMB
- Low Switching Losses
- Thermistor inside
Applications
- xEV Applications
- Converter
- Vehicle Fast Chargers
- Renewable
Additional information
| Module | SiC |
|---|---|
| Package | Easy 1B |
| Feature | Q1 |
| Circuit Diagram | FT: Three phase |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 150 |
| RDS(on) (mΩ) | 9 |
| Tjmax (℃) | 175 |
