EN 
DE 
ZH 
ES 
E2 1200V 160A SIC Power Module
The HCS08FH120E2A2 is a half-bridge SiC MOSFET power module. It integrates high-performance SiC MOSFET chips, designed for applications such as solar inverters, UPS systems, fuel cell DC/DC converters, and energy storage systems.
Description
Features
- Blocking voltage: 1200V
- Rds(on): 7.5mΩ
- Low switching losses
- 175℃ maximum junction temperature
- Built-in thermistor
Applications
- Solar inverter systems
- Fuel cell DC/DC converters
- Uninterruptible power supplies (UPS)
- Energy storage systems
Additional information
| Module | SiC |
|---|---|
| Package | Easy 2B |
| Feature | A2 |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 160 |
| RDS(on) (mΩ) | 7.5 |
| Tjmax (℃) | 175 |
