EN 
DE 
ZH 
ES 
E0 1200V 150A SIC Power Module
The HCS06FH120E1C1 is a half bridge SiC MOSFET Power Module. It integrates high
performance SiC MOSFET chips designed for applications such as Solar Inverter Systems,Fuel cell-DC/DC converters, Uninterruptible Power suppliers, and Energy Storage Systems.
Description
Features
- Blocking voltage:1200V
- Rds(on):6.2mΩ@25℃;10.3mΩ@175℃
- Low Switching Losses
- 175℃maximum junction temperature
- Si3N4AMB
- Thermistor inside
Applications
- Solar inverterSystems
- Fuel cell-DC/DC converter
- Uninterruptible Power Supplier
- Energy Storage Systems
- Solid State Relay
Additional information
| Module | SiC |
|---|---|
| Package | Easy 1B |
| Feature | C1 |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 150 |
| RDS(on) (mΩ) | 6.2 |
| Tjmax (℃) | 175 |
