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650V 6A Silicon Carbide Schottky Diode
VRRM = 650 V
IF ( TC=159 ℃) = 6 A
QC = 22 nC
Description
Features
- 650V Schottky Rectifier
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching
- Extremely Fast Switching
Benefits
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- High Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
Applications
- Switching Mode Power Supply
- Boost Diodes in PFC
- DC/DC Converters
- AC/DC Converters
- Free Wheeling Diodes in Inverter
Maximum Ratings
- Tc=25°C unless otherwise specified
Additional information
| Module | SiC SBD |
|---|---|
| Package | DFN8*8 |
| Blocking Voltage (V) | 650 |
| Module Current (A) | 6 |
| Tjmax (℃) | 159 |
