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650V 150A IGBT Power
- Collector-Emitter Voltage (VCES): 650V
- DC Collector Current (ICDC): 125A
- Repetitive Peak Collector Current (ICRM): 300A
- Total Power Dissipation (Ptot): 173W
- Gate-Emitter Voltage (VGES): ±20V
- Operating Junction Temperature (Tj): Up to 175°C
- Isolation Voltage (Visol): 3.0kV RMS
Description
The HCG150FL065E2RB is a robust 650V 150A IGBT module engineered by Zhejiang HIIITIO New Energy Co., Ltd. for high-power applications. Utilizing a 650V Trench Gate/Field-Stop process, it offers low EMI, reduced switching losses, and a positive VCEsat temperature coefficient for stable performance. Its Al2O3 substrate ensures low thermal resistance, enhancing heat dissipation in demanding environments.
Key Features:
- 650V Trench Gate/Field-Stop Technology: Minimizes EMI and maximizes efficiency.
- Low Switching Losses: Optimizes performance in high-frequency operations.
- Positive VCEsat Temperature Coefficient: Ensures consistent operation across temperatures.
- Al2O3 Substrate: Low thermal resistance for effective heat management.
- Rugged and Compact Design: Integrated clamps for easy, durable mounting.
- Versatile Applications: Perfect for 3-level systems, PCS, UPS, and more.
Additional information
| Module | IGBT |
|---|---|
| Package | Easy 2B |
| Feature | RB |
| Circuit Diagram | FL: 3-level |
| Blocking Voltage (V) | 650 |
| Module Current (A) | 150 |
