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1700V Silicon Carbide Schottky
VDS = 1700 V
RDS（on） = 750 mΩ（VGS = 15 V）
RDS（on） = 550 mΩ（VGS = 20 V）
TJ，max = 175 ℃
Description
Features
- High blocking voltage
- Low on-resistance with high junction temperature
- High-speed switching with low capacitances
- Fast intrinsic diode with low reverse recovery (Qrr )
- RoHS compliant
Benefits
- Higher System Efficiency
- Reduce cooling requirements
- Increased power density
- Enabling higher frequency
- Minimize gate ringing
- Reduction of system complexity and cost
Applications
- Switch Mode Power Supplies
- DC/DC converters
- Solar Inverters
- Battery Chargers
- Motor Drives
Maximum Ratings
- Tc=25°C unless otherwise specified
Additional information
| Module | SiC MOSFET |
|---|---|
| Package | TO-220F-3 |
| Blocking Voltage (V) | 1700 |
| Tjmax (℃) | 175 |
