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1700V 600A IGBT Module, E6 Package, with FWD and NTC
- 1700V Trench Gate & Field Stop Structure for enhanced performance
- Low Switching Loss for energy efficiency
- High Short Circuit Capability (up to 10μs withstand time)
- Positive Temperature Coefficient for operational stability
- High Reliability with integrated FWD and NTC
Description
The HCG600FH170D3K4 is a robust 1700V 600A IGBT module optimized for high-power applications. Encased in an E6 package with built-in free-wheeling diode (FWD) and NTC thermistor, it leverages advanced 1700V trench gate and field stop technology for minimal switching losses and superior short circuit endurance. This module is engineered for reliability in challenging environments like renewable energy systems.
Maximum Ratings
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCES | VGE=0V, Tvj=25°C | 1700 | V |
| DC Collector Current | IC | TC=110°C, Tvj max=175°C | 600 | A |
| Peak Collector Current | ICM | tp=1ms | 1200 | A |
| Gate-Emitter Peak Voltage | VGES | – | ±20 | V |
| Total Power Dissipation | Ptot | TC=25°C, Tvj max=175°C | 3660 | W |
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25°C | 1700 | V |
| Continuous DC Forward Current | IF | – | 600 | A |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 1200 | A |
| I²t-Value | I²t | VR=0V, tp=10ms, Tvj=125°C | 41530 | A²s |
| IGBT Short Circuit Withstand Time | tpsc | – | 10 | μs |
| Maximum Junction Temperature | Tvj max | – | 175 | °C |
| Operating Junction Temperature | Tvj op | – | -40 to 150 | °C |
| Storage Temperature | Tstg | – | -40 to 125 | °C |
Additional information
| Module | IGBT |
|---|---|
| Package | E6 |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1700 |
| Module Current (A) | 600 |
