1700V 1200A IGBT Module, Chopper, E6 Package, with FWD and NTC

  • 1700V Trench Gate & Field Stop Structure for optimal performance
  • High Reliability in demanding environments
  • Positive Temperature Coefficient for thermal stability
  • Integrated FWD with separate brake-chopper (600A) and reverse (200A) diodes
  • Chopper Structure for enhanced switching efficiency
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Description

The HCG1200FC170D3K5 is a powerful 1700V 1200A IGBT module with a chopper structure, designed for high-power industrial applications. Featuring an E6 package with integrated free-wheeling diode (FWD) and NTC thermistor, it incorporates advanced 1700V trench gate and field stop technology for low losses, high reliability, and robust short circuit protection. This module is perfect for efficient power management in renewable energy and industrial systems.

Maximum Ratings

ParameterSymbolConditionValueUnit
Collector-Emitter VoltageVCESVGE=0V, Tvj=25°C1700V
DC Collector CurrentICTC=95°C, Tvj max=175°C1200A
Peak Collector CurrentICMtp=1ms2400A
Gate-Emitter Peak VoltageVGES±20V
IGBT Maximum Power DissipationPtotTC=25°C, Tvj max=175°C5555W
Repetitive Peak Reverse VoltageVRRMTvj=25°C1700V
Continuous DC Forward Current (Brake-Chopper Diode)IF600A
Continuous DC Forward Current (Reverse Diode)IF200A
Repetitive Peak Forward Current (Brake-Chopper Diode)IFRMtp=1ms1200A
Repetitive Peak Forward Current (Reverse Diode)IFRMtp=1ms400A
I²t-Value (Brake-Chopper Diode)I²tVR=0V, tp=10ms, Tvj=125°C58650A²s
I²t-Value (Reverse Diode)I²tVR=0V, tp=10ms, Tvj=125°C6615A²s
Maximum Junction TemperatureTvj max175°C
Operating Junction TemperatureTvj op-40 to 150°C
Storage TemperatureTstg-40 to 125°C

Additional information

Module

IGBT

Package

E6

Circuit Diagram

Chopper

Blocking Voltage (V)

1700

Module Current (A)

1200

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