1700V 1200A IGBT Module, Chopper, E6 Package, with FWD and NTC

  • 1700V Trench Gate & Field Stop Structure for optimal performance
  • High Reliability in demanding environments
  • Positive Temperature Coefficient for thermal stability
  • Integrated FWD with separate brake-chopper (600A) and reverse (200A) diodes
  • Chopper Structure for enhanced switching efficiency
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Description

The HCG1200FC170D3K5 is a powerful 1700V 1200A IGBT module with a chopper structure, designed for high-power industrial applications. Featuring an E6 package with integrated free-wheeling diode (FWD) and NTC thermistor, it incorporates advanced 1700V trench gate and field stop technology for low losses, high reliability, and robust short circuit protection. This module is perfect for efficient power management in renewable energy and industrial systems.

Maximum Ratings

Parameter Symbol Condition Value Unit
Collector-Emitter Voltage VCES VGE=0V, Tvj=25°C 1700 V
DC Collector Current IC TC=95°C, Tvj max=175°C 1200 A
Peak Collector Current ICM tp=1ms 2400 A
Gate-Emitter Peak Voltage VGES ±20 V
IGBT Maximum Power Dissipation Ptot TC=25°C, Tvj max=175°C 5555 W
Repetitive Peak Reverse Voltage VRRM Tvj=25°C 1700 V
Continuous DC Forward Current (Brake-Chopper Diode) IF 600 A
Continuous DC Forward Current (Reverse Diode) IF 200 A
Repetitive Peak Forward Current (Brake-Chopper Diode) IFRM tp=1ms 1200 A
Repetitive Peak Forward Current (Reverse Diode) IFRM tp=1ms 400 A
I²t-Value (Brake-Chopper Diode) I²t VR=0V, tp=10ms, Tvj=125°C 58650 A²s
I²t-Value (Reverse Diode) I²t VR=0V, tp=10ms, Tvj=125°C 6615 A²s
Maximum Junction Temperature Tvj max 175 °C
Operating Junction Temperature Tvj op -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C

Additional information

Module

IGBT

Package

E6

Circuit Diagram

Chopper

Blocking Voltage (V)

1700

Module Current (A)

1200

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