EN 
DE 
ZH 
ES 
1200V 75mΩ Silicon Carbide Power MOSFET TO-247-4L
- 1200V high blocking voltage with 75mΩ RDS(on)
- High-speed switching with low parasitic capacitance
- Resistant to latch-up, easy to parallel, simple to drive
- Reliable operation up to 175℃ junction temperature
- Halogen-free, RoHS-compliant
- Excellent thermal performance with low switching loss
Description
The HCM75S12T4K3 is a 1200V 75mΩ Silicon Carbide (SiC) Power MOSFET in a TO-247-4L package. Designed with advanced SiC technology, it delivers high blocking voltage, low RDS(on), fast switching, and robust reliability. It is ideal for high-efficiency power conversion systems requiring compact design and thermal stability.
Maximum Ratings
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Drain-source voltage | VDS max | VGs=0V,Ip=100μA | 1200 | V |
| Gate-source voltage | VGS max | Absolute maximum values | -10/+22 | V |
| VGS op | Recommended operational values | -5/+18 | V | |
| Continuous drain current | ID | VGs=18V,Tc=25℃ | 42 | A |
| VGs=18V,Tc=100℃ | 30 | |||
| Pulsed drain current | ID pulse | Pulse width tp limited by Tvjmax | 126 | A |
| Power dissipation | PD | Tc=25℃, Tvjmax=175℃ | 197 | W |
| Operating junction temperature | Tvjop | -55~175 | ℃ | |
| Storage temperature range | Tstg | -55~175 | ℃ |
Additional information
| Module | SiC MOSFET |
|---|---|
| Package | TO-247-4L |
| Blocking Voltage (V) | 1200 |
| RDS(on) (mΩ) | 75 |
