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1200V 600A IGBT Module, E6 Package, with FWD and NTC
- 1200V Trench Gate & Field Stop Structure for superior efficiency
- High Short Circuit Capability with 10μs withstand time
- Low Switching Losses for reduced energy consumption
- High Reliability and Positive Temperature Coefficient
- Integrated NTC for precise temperature monitoring
Description
The HCG600FH120D3K4D2 is a high-performance 1200V 600A IGBT module designed for demanding power electronics applications. Featuring an E6 package with integrated freewheeling diode (FWD) and NTC thermistor, this module ensures efficient and reliable operation in high-power systems.
Maximum Ratings
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Collector-emitter voltage | VCES | VGE=OV,Tvj=25℃ | 1200 | V |
| DC collector current | Ic | Tc=115℃, Tyj,max=175℃ | 600 | A |
| Peak collector current | ICM | tp=1ms | 1200 | A |
| Gate-emitter peak voltage | VGES | ±20 | V | |
| Total power dissipation | Ptot | Tc=25°℃, Tvj,max=175℃ | 3950 | W |
| Repetitive peak reversevoltage | VRRM | Tvj=25℃ | 1200 | V |
| Continuous DC forwardcurrent | IF | 600 | A | |
| Repetitive peak forwardcurrent | IFRM | tp=1ms | 1200 | A |
| Rt-value | 12t | VR=0V,tp=10ms,Tv=125℃ | 51000 | A2s |
| IGBT short circuit withstand time | tpsc | 10 | μs | |
| Maximum junction temperature | Tvjmax | 175 | ℃ | |
| Operating junction temperature | Tvjop | -40~150 | ℃ | |
| Storage temperature | Tst | -40~125 | ℃ |
Additional information
| Module | IGBT |
|---|---|
| Package | E6 |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 600 |
