1200V 16A Silicon Carbide Schottky Diode

VRRM = 1200 V
IF (Tc=155 ℃) = 16 A
QC = 106 nC

Description

Features

  • 1200V Schottky Rectifier
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching
  • Extremely Fast Switching

Benefits

  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • High Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switching Mode Power Supply
  • Boost Diodes in PFC
  • DC/DC Converters
  • AC/DC Converters
  • Free Wheeling Diodes in Inverter

Maximum Ratings

  • Tc=25°C unless otherwise specified

Additional information

Module

SiC SBD

Package

TO-247-3

Blocking Voltage (V)

1200

Module Current (A)

16

Tjmax (℃)

155

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