Top 10 SiC MOSFET Manufacturers in 2026

Silicon carbide (SiC) MOSFETs now sit at the center of EV traction inverters, solar and storage systems, fast chargers, and industrial drives. Compared with silicon IGBTs, they switch faster, run hotter, and waste less energy. The supplier base is concentrated: TrendForce reported that the top five vendors captured roughly 91.9% of SiC power device revenue in 2023. Below are ten manufacturers worth shortlisting, ordered by market influence (revenue share, scale, and vertical integration), with HIITIO featured as a specialist in customizable SiC modules.

1. STMicroelectronics

• Founded: 1987 | Headquarters: Geneva, Switzerland
• Core products: STPOWER SiC MOSFETs, SiC diodes, SiC power modules
• Website: st.com | SiC MOSFET page: st.com/sic-mosfets

Company overview: STMicroelectronics (ST) is a global semiconductor leader and the largest SiC power device supplier by revenue. TrendForce’s 2023 ranking gave ST a 32.6% share, well ahead of every competitor. Its strength comes from scale and integration: ST supplies SiC MOSFETs to major automotive programs and is building a fully integrated 200mm SiC device and module campus in Catania, Italy. Controlling the chain from substrate to packaged module gives ST leverage over supply, cost, and quality. Its STPOWER portfolio covers EV traction inverters, on-board chargers, industrial motor drives, and solar systems, from 650 V up through 1200 V and beyond. For high-volume automotive programs, ST is often the first supplier engineers evaluate.

Featured product: STPOWER Gen 4 SiC MOSFETs (750 V/1200 V) offer lower on-resistance and faster switching than the prior generation. Their die is 12% to 15% smaller than Gen 3, enabling compact converters for 400 V and 800 V EV traction inverters, industrial drives, and AI server power.

2. onsemi

• Founded: 1999 | Headquarters: Scottsdale, Arizona, USA
• Core products: EliteSiC MOSFETs, SiC diodes, SiC power modules, gate drivers
• Website: onsemi.com | SiC MOSFET page: EliteSiC MOSFETs

Company overview: onsemi climbed from fourth to second place in TrendForce’s 2023 SiC revenue ranking, driven largely by its automotive EliteSiC line. Its differentiator is vertical integration. After acquiring GT Advanced Technologies (GTAT), onsemi’s self-sufficiency in SiC substrate material passed 50%, and it manufactures from crystal growth through finished devices. It also expanded its SiC wafer fab in Bucheon, South Korea, with a planned move to 8-inch wafers. The business centers on EV traction, on-board charging, solar inverters, and energy infrastructure. AEC-Q101 qualified parts and secure, traceable supply make onsemi a common choice for automotive programs that cannot tolerate shortages.

Featured product: EliteSiC MOSFETs span 650 V, 900 V, and 1200 V classes in TO-247 and D2PAK-7L packages. Parts such as the NVBG015N065SC1 (650 V, 12 mΩ typical) are AEC-Q101 qualified and target on-board chargers, DC/DC converters, and PFC stages.

3. Infineon Technologies

• Founded: 1999 (spun off from Siemens) | Headquarters: Neubiberg (Munich), Germany
• Core products: CoolSiC MOSFETs (discrete and module), gate drivers, IGBTs
• Website: infineon.com | SiC MOSFET page: CoolSiC MOSFETs

Company overview: Infineon is a global leader in power semiconductors and ranked third in TrendForce’s 2023 SiC revenue ranking with a 16.5% share. Nearly half of its SiC revenue comes from industrial applications, giving it broad exposure to solar, EV charging, and drives, while its automotive business has grown through design wins such as the Xiaomi SU7. Unlike ST and onsemi, Infineon does not grow its own SiC crystals and relies on a diversified supplier base to secure materials. Its Kulim, Malaysia fab is central to capacity expansion, and the company has produced 8-inch wafer samples ahead of future volume production. Engineers value its deep application notes and gate driver ecosystem.

Featured product: The CoolSiC MOSFET G2 discrete family spans 650 V to 2000 V, with on-resistance from 7 mΩ to 1000 mΩ. The 1200 V G2 devices support overload operation up to 200°C, a 2 µs short-circuit rating, and a 4.2 V gate threshold, in TO-247-4, D²PAK-7L, and Q-DPAK packages.

4. Wolfspeed

• Founded: 1987 (as Cree Research) | Headquarters: Durham, North Carolina, USA
• Core products: SiC MOSFETs (discrete, bare die, modules), SiC Schottky diodes, SiC materials
• Website: wolfspeed.com | SiC MOSFET page: Discrete SiC MOSFETs

Company overview: Wolfspeed is the pioneer of commercial SiC and the world’s best-known SiC materials supplier, ranking fourth in TrendForce’s 2023 power device revenue table with an 11.1% share. Its Mohawk Valley fab, opened in 2022, was the first purpose-built, fully automated 200mm SiC fab. The company filed for Chapter 11 protection on June 30, 2025, and emerged on September 29, 2025, after cutting total debt by roughly 70%. It now positions itself as a vertically integrated 200mm manufacturer with a self-funded growth plan. Buyers should weigh Wolfspeed’s technology heritage and materials depth against its ongoing manufacturing ramp, and it recently announced automotive MOSFETs for Toyota BEV on-board chargers.

Featured product: The Gen 4 1200 V portfolio includes the C4MS discrete MOSFET family in TO-247-4 and top-side-cooled packages, plus bare die options for custom modules. These parts are optimized for hard-switched solar, energy storage, EV charging, UPS, and motor drive applications.

5. ROHM Semiconductor

• Founded: 1958 | Headquarters: Kyoto, Japan
• Core products: EcoSiC MOSFETs, SiC diodes, SiC modules, gate driver ICs
• Website: rohm.com | SiC MOSFET page: SiC MOSFETs

Company overview: ROHM is an early SiC pioneer and ranked fifth in TrendForce’s 2023 revenue table. The company acquired the Kunitomi plant as its fourth SiC production site and planned to begin 8-inch SiC substrate production, followed by power devices. It has built long-term relationships with automotive customers and Tier 1 suppliers, including Vitesco Technologies, Mazda, and Geely, and its fourth-generation MOSFETs are also used in SEMIKRON’s eMPack EV power modules. ROHM’s EcoSiC brand covers devices, modules, and the gate drivers best matched to them. This single-source breadth appeals to designers who want tested pairings of SiC devices and drive circuits rather than assembling them from multiple vendors.

Featured product: The 4th Gen SiC MOSFET series (SCT4xxx) delivers about 40% lower on-resistance and about 50% lower switching loss than its predecessor, with a simple 15 V gate drive. Examples include the SCT4036KR (1200 V, 36 mΩ, TO-247-4L).

6. HIITIO Semiconductor

• Founded: 2018 (spun off from Hecheng Electric) | Headquarters: Zhejiang, China
• Core products: SiC modules, SiC discrete MOSFETs, SiC/Si hybrid modules, IGBT modules, IGBT & SiC drivers
• Website: hiitiosemi.com | SiC pages: SiC Module | SiC Discrete MOSFET

Company overview: HIITIO Semiconductor is a power module specialist that concentrates on IGBT and SiC modules for EV power systems, solar and wind inverters, energy storage, charging stations, welding, and induction heating. Its R&D team, half of whom hold master’s or PhD degrees, has built a catalog covering 650 V to 6500 V and above and 10 A to 5000 A. Production runs in-house on a 3,000 m² base with a dedicated 1,500 m² power module line, 10,000-class cleanrooms, and 23 quality checkpoints, including 100% X-ray void inspection. The company holds IATF 16949 certification and offers customization, with engineering recommendations promised within 24 hours of a project inquiry.

Featured product: HIITIO’s SiC range includes half-bridge modules in Easy, 62 mm, and Econo Dual packages at 1200 V, 1700 V, and 2200 V. Examples include the HCS900FH120D3C1 (1200 V, 900 A) for EV charging and the HCS160FH120A2A (1200 V, 160 A, 62 mm) for induction heating. SiC modules are rated for operation up to 200°C.

7. Mitsubishi Electric

• Founded: 1921 | Headquarters: Tokyo, Japan
• Core products: Full-SiC and hybrid-SiC power modules, IGBT modules, IPMs
• Website: mitsubishielectric.com | SiC page: Power Modules

Company overview: Mitsubishi Electric brings decades of power module experience to SiC, with particular strength in rail traction, industrial equipment, grid systems, and home appliances. In 2018 it announced a 6.5 kV full-SiC module in the HV100 package, using SBD-embedded SiC-MOSFETs to claim the highest power density among modules rated 1.7 kV to 6.5 kV. Its second-generation industrial full-SiC modules, on sale from January 2021, reduce power loss by about 70% versus its conventional Si-IGBT modules. The company also extended SiC into appliances with full-SiC and hybrid-SiC SLIMDIP modules for air conditioners. Mitsubishi Electric is best suited to buyers who need rugged, high-voltage modules rather than discrete MOSFETs.

Featured product: Second-generation Full-SiC modules combine SiC-MOSFET and SiC-SBD chips in 1200 V and 1700 V classes, such as 2-in-1 configurations up to 1200 V/800 A, delivering the roughly 70% loss reduction against Si-IGBT modules.

8. Toshiba Electronic Devices & Storage

• Founded: Toshiba Group dates to 1875 | Headquarters: Tokyo, Japan
• Core products: SiC MOSFET modules, SiC Schottky diodes, MOSFETs, gate drive reference designs
• Website: toshiba.semicon-storage.com | SiC page: SiC MOSFET Modules

Company overview: Toshiba’s semiconductor business focuses its SiC effort on modules for railway vehicles, renewable energy, and industrial equipment. Its iXPLV (intelligent flexible package low voltage) housing uses silver-sintered internal bonding to improve efficiency and thermal reliability, and several modules are mounting-compatible with common silicon IGBT packages, which simplifies redesigns. Toshiba also publishes a reference gate drive design for its dual SiC modules, built around the TLP5231 pre-driver coupler with external buffer MOSFETs, which shortens development time for engineers moving from IGBTs. While its market share trails the top five, Toshiba is a credible option for high-voltage industrial and traction applications that value package compatibility and proven reliability.

Featured product: The MG800FXF2YMS3 (3300 V/800 A 2-in-1) supports channel temperatures up to 175°C, 6000 VRMS isolation, and about 12 nH stray inductance. The lineup also includes 2200 V/250 A, 1700 V/400 A, and 1200 V/600 A modules.

9. Microchip Technology

• Founded: 1989 | Headquarters: Chandler, Arizona, USA
• Core products: mSiC MOSFETs, SiC diodes, SiC modules, gate drivers
• Website: microchip.com | SiC page: mSiC Devices and Modules

Company overview: Microchip offers a broad mSiC portfolio of discrete MOSFETs, bare die, power modules, and SiC gate drivers, backed by more than 20 years of SiC development. Its MOSFET range spans 700 V to 3.3 kV with on-resistance from 15 mΩ to 750 mΩ, and its modules cover 700 V to 1700 V. Through its power module heritage, the company has offered customized modules since 1983, which suits customers whose designs do not fit a catalog part. Microchip’s MB and MC MOSFET families include AEC-Q101 qualified options for automotive and industrial use. Its mix of silicon and SiC discretes and modules lets it support mixed-technology designs and power supplies, UPS, and commercial vehicle programs.

Featured product: BZPACK mSiC power modules, launched in March 2026, use Microchip’s MB and MC MOSFET technology and are tested beyond the 1,000-hour HV-H3TRB standard, making them suitable for harsh industrial and renewable energy environments.

10. Semikron Danfoss

• Founded: 1951 (Semikron); merged with Danfoss Silicon Power in 2022 | Headquarters: Nuremberg, Germany
• Core products: Full-SiC and hybrid-SiC modules, IGBT modules, MOSFET modules, drivers
• Website: semikron-danfoss.com | SiC page: SiC Modules

Company overview: Semikron Danfoss is a family-owned power module specialist created when Semikron and Danfoss Silicon Power combined in 2022. Its catalog includes roughly 11,600 power semiconductors from 1 kW to 10 MW, and it operates plants across Europe, the Americas, and Asia, including Germany, Brazil, China, India, Korea, and the USA. The company packages SiC for industrial drives, renewable energy, and electric vehicles, offering both full-SiC and hybrid SiC/Si modules. Its automotive-qualified eMPack platform uses ROHM’s fourth-generation SiC MOSFETs. Semikron Danfoss is a strong fit for OEMs that want proven module packaging, application support, and local manufacturing close to their own production sites.

Featured product: Full-SiC modules in the 1200 V class (about 18 A to 541 A) and hybrid SiC modules (about 25 A to 600 A) give designers a choice between maximum efficiency and cost-optimized performance.

Choose HIITIO for Your Next SiC Power Design

Looking for SiC MOSFET modules that balance performance, cost, and engineering flexibility? HIITIO Semiconductor designs and manufactures SiC modules, SiC discrete MOSFETs, SiC/Si hybrid modules, and IGBT & SiC drivers for EV charging, solar, energy storage, and industrial applications. Explore the SiC Module range and SiC Discrete MOSFET range, then send your voltage, current, topology, and package requirements to sales@hiitio.com. Our engineers respond with tailored recommendations within 24 hours, backed by in-house production, 100% X-ray void inspection, and IATF 16949 certification. Whether you are building an EV charger, a solar inverter, or an induction heating system, HIITIO helps you move from sample to volume with confidence. Request a free quote today.