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1200V 32mΩ Silicon Carbide Power MOSFET TO-247-4L
- High blocking voltage (1200V) with ultra-low RDS(on) of 32mΩ
- High-speed switching with low parasitic capacitance
- Easy parallel operation and simple gate drive
- Robust performance up to 175℃ junction temperature
- Halogen-free, RoHS-compliant
- Suitable for resonant topologies
Description
The HCM32S12T4K2B is a 1200V 32mΩ Silicon Carbide (SiC) Power MOSFET in a TO-247-4L package, designed for high-efficiency and high-reliability applications. Built with 3rd Generation SiC MOSFET technology, it offers low on-resistance, high-speed switching, and excellent thermal performance.
Maximum Ratings
| Parameter | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Drain-source voltage | VDS max | VGs=0V,Ip=100μA | 1200 | V |
| Gate-source voltage | VGS max | Absolute maximum values | -10/+22 | V |
| VGS op | Recommended operational values | -5/+18 | V | |
| Continuous drain current | ID | VGs=18V,Tc=25℃ | 90 | A |
| VGs=18V,Tc=100℃ | 64 | |||
| Pulsed drain current | ID pulse | Pulse width tp limited by Tvjmax | 270 | A |
| Power dissipation | PD | Tc=25℃, Tvjmax=175℃ | 417 | W |
| Operating junction temperature | Tvjop | -55~175 | ℃ | |
| Storage temperature range | Tstg | -55~175 | ℃ |
Additional information
| Module | SiC MOSFET |
|---|---|
| Package | TO-247-4L |
| Blocking Voltage (V) | 1200 |
| RDS(on) (mΩ) | 32 |
