1200V 450A lGBT Module, A3 Package, with FWD and NTC

  • Rated Voltage: 1200V
  • Rated Current: 450A (DC), 900A (Peak)
  • Package: A3 with built-in FWD & NTC
  • Low switching losses and high power density
  • Maximum junction temperature: 175℃
  • Storage temperature: -40℃ to 125℃
  • Isolation voltage: 4.0 kV
  • Compact weight: 290 g
Category:

Description

The HCG450FL120A3F5 IGBT Module from HIITIO is a high-performance 1200V, 450A power semiconductor in an A3 package. It integrates a freewheeling diode (FWD) and an NTC thermistor for enhanced thermal monitoring and protection. With low switching losses, high power density, and a positive temperature coefficient, this module is designed for demanding power electronics applications.

Maximum Ratings

Parameter Symbol Value Unit
Maximum junction temperature Tvjmax 175
Operating junction temperature Tvjop -40~150
Storage temperature Tstg -40~125

Additional information

Module

IGBT

Package

A3

Circuit Diagram

FL: 3-level

Blocking Voltage (V)

1200

Module Current (A)

450

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