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Econo Dual 3H 1200V 900A IGBT Power Module
- 1200V Trench Gate/Field-Stop Process
- Low EMI
- VCEsat with Positive Temperature Coefficient
- Integrated Temperature Sensor
- Al2O3 Substrate with Low Thermal Resistance
Description
The HCG900FH120D3RC is a robust 1200V/900A IGBT module designed for high-efficiency power electronics applications. Featuring advanced 1200V trench gate and field-stop technology, it offers low electromagnetic interference (EMI) and a positive temperature coefficient of collector-emitter saturation voltage (VCEsat) to ensure stable operation. This module includes an integrated temperature sensor and uses a low thermal resistance Al2O3 substrate for superior heat dissipation and reliability.
Key Features:
- 1200V trench gate/field-stop technology
- Low EMI emissions
- Positive temperature coefficient of VCEsat
- Integrated temperature sensor for monitoring
- Low thermal resistance Al2O3 substrate
- Continuous collector current: 900A
- Maximum junction temperature: 175°C
- Isolation test voltage: 3kV RMS
Additional information
| Module | IGBT |
|---|---|
| Package | Econo Dual 3H |
| Feature | RC |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 900 |
