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Econo Dual 3H 1200V 450A IGBT Power Module
- 1200V Trench Gate/Field-Stop Process
- Low EMI
- VCEsat with Positive Temperature Coefficient
- Integrated Temperature Sensor
- Al2O3 Substrate with Low Thermal Resistance
Description
The HCG450FH120D3RB is a high-performance 1200V/450A IGBT module designed for advanced power electronics applications. Featuring a 1200V trench gate and field-stop process, this module offers low electromagnetic interference (EMI) and a positive temperature coefficient of VCEsat for enhanced reliability. It integrates a temperature sensor and utilizes a low thermal resistance Al2O3 substrate to ensure efficient heat dissipation.
Key Features:
- 1200V trench gate/field-stop technology
- Low EMI emissions
- Positive temperature coefficient of VCEsat
- Integrated temperature sensor for monitoring
- Low thermal resistance Al2O3 substrate
- Continuous collector current: 450A
- Repetitive peak collector current: 900A
- Maximum junction temperature: 175°C
- Isolation test voltage: 3kV RMS
Additional information
| Module | IGBT |
|---|---|
| Package | Econo Dual 3H |
| Feature | RB |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 450 |
