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650V 100A IGBT Power
- Collector-Emitter Voltage (VCES): 650V
- DC Collector Current (ICN): 100A
- Repetitive Peak Collector Current (ICRM): 200A
- Power Dissipation (Ptot): 135W
- Gate-Emitter Voltage (VGES): ±20V
- Operating Junction Temperature (Tj): Up to 175°C
Description
The HCG100FL065E2RB is a high-performance 650V 100A IGBT module designed for advanced power electronics applications. Engineered by Zhejiang HIIITIO New Energy Co., Ltd., this module leverages a 650V Trench Gate/Field-Stop process to deliver low EMI, reduced switching losses, and a positive temperature coefficient for VCEsat. Its compact design, featuring an Al2O3 substrate with low thermal resistance, ensures efficient heat dissipation and reliable performance under demanding conditions.
Key Features:
- 650V Trench Gate/Field-Stop Technology: Optimized for low EMI and high efficiency.
- Low Switching Losses: Enhances energy efficiency in high-frequency applications.
- Positive VCEsat Temperature Coefficient: Ensures stable performance across temperature ranges.
- Al2O3 Substrate: Provides low thermal resistance for superior heat management.
- Compact and Rugged Design: Integrated mounting clamps for easy and secure installation.
- Wide Application Range: Suitable for 3-level systems, PCS, UPS, and more.
Additional information
| Module | IGBT |
|---|---|
| Package | Easy 2B |
| Feature | RB |
| Circuit Diagram | FL: 3-level |
| Blocking Voltage (V) | 650 |
| Module Current (A) | 100 |
