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E4 1200V 300A SIC Power Module
The HCH300FA120H5C1 is a 3-level power module. It integrates 1200V SiC MOSFET chips and 1200V IGBT chips, designed for applications such as solar inverters, high-frequency switching, and energy storage systems.
Description
Features
- Blocking voltage: 1200V
- Rds(on): 4.3 mΩ @ VGS = 18V
- Low switching losses
- High current density
- PressFIT contact technology
- 175°C maximum junction temperature
- Built-in thermistor
Applications
- Solar inverter systems
- Three-level applications
- Energy storage systems
- High-frequency switching applications
Additional information
| Module | SiC/Si Hybrid |
|---|---|
| Package | HPD |
| Feature | C1 |
| Circuit Diagram | ANPC |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 300 |
| RDS(on) (mΩ) | 4.3 |
