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ED3 1200V 900A SIC Power Module
The HCS900FH120D3C1 is a Half Bridge SiC MOSFET Power Module. It integrates high-performance SiC MOSFET chips designed for applications such as motor drives and renewable energy.
Description
Features
- Blocking voltage 1200V
- RDS(on) =2.0 mΩ
- Low thermal resistance with Si3N4 AMB
- 175°C maximum junction temperature
- Thermistor inside
- Low Switching Losses
Applications
- xEV Applications
- Motor Drives
- Vehicle Fast Chargers
- Smart – Grid/Grid-Tied Distributed Generation
Additional information
| Module | SiC |
|---|---|
| Package | Econo Dual 3A |
| Feature | C1 |
| Circuit Diagram | Half Bridge |
| Blocking Voltage (V) | 1200 |
| Module Current (A) | 900 |
| RDS(on) (mΩ) | 2 |
| Tjmax (℃) | 175 |
