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SiC Discrete Mosfet
Discrete SiC Schottky Diodes are designed for high efficiency and precise control, featuring excellent high-temperature endurance, voltage tolerance, and high-frequency response. Widely used in industrial automation, automotive electronics, and energy management systems, they deliver stable and efficient power conversion solutions.
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Image | Part Number | Type | Package | Circuit Diagram | Blocking Voltage (V) | Current (A) | RDS(on) (mΩ) | Specifications |
|---|---|---|---|---|---|---|---|---|
 | SiC SBD | TO-220-2 | 1200 | 2 | ||||
| SiC SBD | TO-220-2 | 650 | 4 | ||||
 | SiC SBD | DFN8*8 | 650 | 6 | ||||
 | SiC SBD | SOT-227 | 1200 | 120 | ||||
 | SiC SBD | TO-247-3 | 1200 | 16 | ||||
| SiC SBD | TO-247-3 | 1200 | 20 | ||||
 | SiC SBD | TO-247-2 | 1200 | 20 | ||||
| SiC SBD | TO-247-3 | 1200 | 40 | ||||
| SiC SBD | TO-247-2 | 1200 | 40 | ||||
| SiC SBD | TO-247-2 | 1200 | 60 | ||||
 | SiC MOSFET | TO-247-4L | 1200 | 13 | ||||
| SiC MOSFET | TO-247-3 | 1200 | 75 | 37 | |||
 | SiC MOSFET | TO-247-4 | 1200 | 75 | 37 | |||
| SiC MOSFET | TO-247-3 | 1200 | 42 | 75 | |||
| SiC MOSFET | TO-247-4 | 1200 | 42 | 75 | |||
| SiC MOSFET | TO-247-3 | 1700 | 9 | 650 | |||
 | SiC MOSFET | TO-220F-3 | 1700 | |||||
 | SiC MOSFET | TO-263-7 | 1700 | |||||
| SiC MOSFET | TO-247-4L | 1200 | 32 | ||||
| SiC MOSFET | TO-247-4L | 1200 | 32 |
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