Automotive Grade Solution

  • High current density,industry-leading operating conditions
  • Low conduction and switching losses for higher outgoing currents
  • Low stray inductance design to avoid oscillation, low thermal resistance design
  • Substrates, backplanes, housings, etc. can be customized to meet customer’s diverse power requirements
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Introduction to the Automotive Grade SiC Module Series

The encapsulation and plastic packaging series products developed by using the high-performance planar gate SiC MOSFET chips from Xilian, cover the entire range from 750V to 1200V. They feature high current density, low switching loss, and high short-circuit capability, and can meet the high reliability power modules for complex automotive working conditions.

Product model chip Types Ic(A)@25℃ Topology Rated(V) Packaging
HCS900FH120D3C1 Sic 900 Half Bridge 1200 Econo Dual 3A
HCS600FH120D3M SiC 600 Half Bridge 1200 Econo Dual 3A
HCS450FH120M2 Sic 450 Half Bridge 1200 Econo Dual 3A
HCS300FH120D3C1 SiC 300 Half Bridge 1200 Econo Dual 3A
HCS800FH170D3C1 SiC 800 Half Bridge 1700 Econo Dual 3A
HCS600FH170D3C1 SiC 600 Half Bridge 1700 Econo Dual 3A
HCS450FH170D3C1 Sic 450 Half Bridge 1700 Econo Dual 3A
HCS300FH170D3C1 SiC 300 Half Bridge 1700 Econo Dual 3A
HCS450FH220D3M Sic 450 Half Bridge 2200 Econo Dual 3A
HCS600FH220D3M SiC 600 Half Bridge 2200 Econo Dual 3A
HCS600FH120D4C2 SiC 600 Half Bridge 1200 Econo Dual3B
HCS400FH120D4C2 Sic 400 Half Bridge 1200 Econo Dual3B
HCS300FH120D4C2 Sic 300 Half Bridge 1200 Econo Dual3B
HCS400FC120D4C2 SiC 400 Chopper 1200 Econo Dual3B
HCS400FC170D4C2 Sic 400 Chopper 1700 Econo Dual3B
HCS600FH120D5B3 SiC 600 Half Bridge 1200 Econo Dual3C

Planar Gate SiC MOSFET for Efficiency

A proven chip structure balancing switching speed and conduction loss, ensuring stable dynamic performance even under high-frequency operation.

Ultra-Low Stray Inductance Package

Optimized current paths suppress voltage overshoot and ringing, reducing EMI while improving switching quality and system safety margin.

High Current Density in Compact Size

Deliver more power from a smaller footprint, enabling compact, lightweight, and highly integrated inverter designs.

Higher Efficiency at System Level

Lower switching and conduction loss reduces cooling demand while increasing vehicle driving range and energy utilization.

Need a Custom SiC Module Solution?

Tell us your system requirements — we deliver the optimized module

Superior Thermal & Short-Circuit Capability

Engineered for high-temperature environments and mission-profile-based reliability

Low Thermal Resistance Structure

Multi-layer thermal path enables fast heat extraction, reducing temperature rise and sustaining higher power output.

High Junction Temperature Capability

Operates at higher junction temperatures while maintaining electrical performance and long-term reliability.

Robust Short-Circuit Withstand Capability

Provides longer protection response time during fault conditions, increasing system safety margin.

Extended Power Cycling Lifetime

Enhanced material matching improves resistance to thermo-mechanical stress, meeting automotive lifetime expectations.

Your Trusted SiC Module Partner

HIITIO is an engineering-driven power semiconductor manufacturer specializing in IGBT module design for demanding industrial and renewable energy applications.
With strong in-house capabilities covering chip selection, module packaging, thermal optimization, and reliability validation, HIITIO delivers products engineered for long-term operation under harsh electrical and environmental conditions.

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Application Scenarios

Designed for next-generation electric drivetrain architectures

EV_traction_inverter-

EV Traction Inverter

E-axle for commercial vehicles

E-axle for commercial vehicles

High-voltage performance platforms

High-voltage performance platforms

Bidirectional_power_conversion_systems

Bidirectional power conversion systems

Common questions about HIITIO Wind Power IGBT Modules

The module supports 750V, 800V, 1000V and higher voltage platforms for both passenger and commercial EV drivetrains, with customization available for special voltage requirements.

SiC modules deliver lower switching and conduction loss, enabling higher efficiency, reduced cooling size, increased power density, and extended driving range.

The module is designed and validated under mission-profile conditions including power cycling, thermal shock, short-circuit, and HTRB tests for long-term drivetrain operation.

HIITIO provides full application support including loss simulation, thermal design guidance, gate driver matching, and busbar parasitic optimization.

With in-house packaging lines and a mature supply chain, we ensure fast ramp-up from prototyping to mass production and long-term delivery stability.

You can contact HIITIO directly through the inquiry form to request datasheets, samples, or engineering support for your wind power project.

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Start Your High-Efficiency SiC Drivetrain Project Today

Get optimized SiC modules engineered for efficiency reliability and fast system integration support

HIITIO is a global provider of power semiconductor solutions for new energy mobility and clean power systems, focusing on the development and manufacturing of high-performance power modules. With strong in-house capabilities in chip selection, packaging process development, thermal optimization, and reliability validation, we deliver SiC modules engineered for long-term operation under high-frequency, high-temperature, and high-power-density conditions.

Tailored module selection

Loss & efficiency estimation

Thermal design guidance

20 Years of Expertise

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