650V 450A Easy 3B IGBT Power Module

  • Collector-Emitter Voltage (VCES): 650V
  • DC Collector Current (ICDC): 335A (T1/T4), 299A (T2/T3)
  • Repetitive Peak Collector Current (ICRM): 900A (T1/T4), 640A (T2/T3)
  • Total Power Dissipation (Ptot): 442W (T1/T4), 358W (T2/T3)
  • Gate-Emitter Voltage (VGES): ±20V
  • Operating Junction Temperature (Tj): Up to 175°C
  • Thermal Resistance (RthJH): 0.215 K/W (T1/T4), 0.265 K/W (T2/T3)
Category:

Description

The HCG450FL065E3RE is a high-efficiency 650V 450A IGBT module from Zhejiang HIIITIO New Energy Co., Ltd., tailored for I-type 3-level NPC inverter applications. Utilizing trench gate/field-stop technology, it delivers low VCEsat, reduced switching losses, and a positive temperature coefficient for optimal performance. The module features an Al2O3 substrate for low thermal resistance, a compact low-inductance design, and DBC technology for superior heat dissipation, ensuring reliability in high-power systems.

Key Features:

  • 650V 3-Level NPC Topology: Optimized for high-power inverters.
  • Low VCEsat & Switching Losses: Enhances efficiency in high-frequency operations.
  • Al2O3 Substrate: Provides low thermal resistance for reliable performance.
  • Compact Low-Inductance Design: Minimizes EMI and improves stability.
  • DBC Technology: Enhances heat dissipation for extended lifespan.
  • Wide Applications: Suitable for UPS, solar, APF/SVG, and 3-level systems.

Additional information

Module

IGBT

Package

Easy 3B

Feature

RE

Circuit Diagram

FL:3-level,I Type,NPC Inverter

Blocking Voltage (V)

650

Module Current (A)

450

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